Asymmetry of magnetization reversal of pinned layer in NiFe/Cu/NiFe/IrMn spin-valve structure

Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations. © 2014 Springer Science+Business Media New York.

 

https://doi.org/10.1007/s10948-013-2473-0

 

Citation:

Chechenin, N.G., Chernykh, P.N., Dushenko, S.A. et al. J Supercond Nov Magn (2014) 27: 1547. https://doi.org/10.1007/s10948-013-2473-0

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