Sector of ion-beam technologies

The experimental complex based on the Van der Graaff type accelerator HVEE AN-2500. It is a high voltage electrostatic generator. We use it to accelerate various charged ions (see table below), ion implantation and Rutherford backscattering (RBS) studies. RBS is realized using hydrogen or helium ions in the energy range of 0.8-2.0 MeV.

At that moment, the installation has two lines:

  • Line of ion implantation. During the bombardment of solids, ions penetrate deep into the bombarded object (target). The most widely usage of ion implantation is the doping of semiconductors in order to create p-n junctions, heterojunctions, and low impedance contacts. Ion implantation in metals is used to increase their hardness, wear resistance, corrosion resistance, etc.
  • RBS line. The nuclear-physical method for studying solids, the so-called Rutherford backscattering method, is based on the use of a physical phenomenon - elastic scattering of accelerated particles by large angles during their interaction with atoms of matter. This method has long been used in nuclear physics to determine the composition of targets by analyzing the energy spectra of backscattered particles. The analytical capabilities of Rutherford scattering of light particles have been widely used in various fields of physics and technology, from the electronics industry to research on structural phase transitions in high-temperature compounds. Thin films and Nanostructures are the most often object on our RBS line.

Mass range

В ±150 321 A.M.U.

Beam energy

200-2000 keV for one type of ion

Ion Specie, range:

800-2000KV

400-800KV

200-400KV

4He+;       11B+;    16O+;     28Si+;    31P+;    40Ar+;     75As+

≈150μA; ≈40μA; ≈35μA; ≈40μA; ≈40μA; ≈200μA; ≈40μA.

approximately 70% of the above values

approximately 50% of the above values

Beam current ripple

± 10%

Terminal Voltage stability

ripple ±2 KV

drift ±2 KV

 

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