PLD-MS-RHEED-ALD-SIMS-AFM

All in situ - one vacuum space - thin film structures growth and investigation tool.

Two complementary methods of formation nanoscale objects:

  • Pulsed Laser Deposition (PLD);
  • Atomic Layer Deposition (ALD).

 

Pulsed Laser Deposition

 

Specifications:

  • Solid-state Nd: YAG laser operating at 1, 2, 3 and 4th harmonics (wavelength 1064, 532,355 and 266 nm);
  • High Т heater;
  • Gas flow control; 
  • High vacuum (10-10 Torr).

Applications:

  • Multiple Component Oxides;
  • High Temperature Superconductors;
  • Magnetic and Metallic Material Deposition;
  • Low Vapor Pressure Materials MEMS.

 

Atomic Layer Deposition

 

is used to fabricate ultra­thin and con­formal thin film structures for many semiconductor and thin film device applications and sequential self­limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime. 

Specifications:

  • 4 gas lines;
  • Up to 500oC heater;
  • SIMS gas control.

Applications:

  • Moisture barrier layers;
  • Device Encapsulations;
  • MEMS.

 

Secondary lon Mass Spectrometry

 

Secondary lon Mass Spectrometry (SIMS) is the most sensitive of all the commonly­-employed surface analytical techniques - capable of detecting impurity elements present in а surface layer at <1ppm concentration, and bulk concentrations of impurities of around 1ppb (parts-per­-billion) in favorable cases. This is because of the inherent high sensitivity associated with mass spectrometric-based techniques.

Surface Analysis by TOF-SIMS "Kore The SurfaceSeer":

  • TOF-SIMS surface analysis;
  • Surface mass spectrometry;
  • Insulator analysis;
  • Positive and Negative SIMS 1000 M/∆M;
  • Mass range >1000m/z;
  • Sputter cleaning capability;
  • 5 minute time for analysis;
  • Compact;
  • Expandble.

  

ln situ Reflection High-Energy ELectron Diffraction ("RIA-RHEED")

 

  • Diffraction studies and growth moni­toring for different applications;
  • Electron beam of small spot size and energies up to 10 keV;
  • Real-Time Oscillation Measurement and FFT Analysis;
  • Lattice Constant Measurement;
  • 2D and 3D Charts for Documentation.